Silicon (Si) possesses high theoretical lithium-ion (Li⁺)-storage capability but is still limited to a huge volume change in the charging–discharging process and has poor conductivity, which hinders its application. Here, the authors report a novel three-dimensional (3D) continuous porous silicon/copper (Cu) composite film through non-solvent-induced phase separation and heat treatment. The composite film inherits the developed 3D channels of copper with a proper pore size (1–5 μm), while the silicon particles can evenly adhere onto the 3D copper current collector tightly by heat treatment. It provides a reversible capacity of up to 2054.9 mAh/g after 150 cycles under a current of 0.05 C and exhibits a good rate capability (609.9 mAh/g at a high rate of 1 C) when used as an electrode. Naturally, the 3D porous architecture could not only shorten the electron/ion transmission path but also induce space-confined silicon, which provides a stable space for the volume expansion/contraction of silicon to restrict pulverization. This strategy provides ideas for the development of high-energy-density electrodes for next-generation energy-storage systems.

中文翻译：

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纳米硅空间受限于 3D 多孔铜作为高性能锂存储的负极

硅 (Si) 具有高理论锂离子 (Li ⁺)-存储能力，但仍受限于充放电过程中巨大的体积变化，且导电性差，阻碍了其应用。在这里，作者报告了一种通过非溶剂诱导相分离和热处理的新型三维 (3D) 连续多孔硅/铜 (Cu) 复合膜。复合膜继承了已开发的具有适当孔径（1-5μm）的铜 3D 通道，而硅颗粒可以通过热处理均匀地紧密粘附在 3D 铜集流体上。它在 0.05 C 的电流下循环 150 次后可提供高达 2054.9 mAh/g 的可逆容量，并在用作电极时表现出良好的倍率性能（在 1 C 的高倍率下为 609.9 mAh/g）。自然，3D 多孔结构不仅可以缩短电子/离子传输路径，还可以诱导空间受限的硅，为硅的体积膨胀/收缩提供稳定的空间，以限制粉化。该策略为开发用于下一代储能系统的高能量密度电极提供了思路。