The response of a 20-nm fully depleted silicon on insulator (FDSOI) transistor under irradiation by heavy ions is analysed using GEometry ANd Tracking (Geant4) and Synopsys Sentaurus device simulations. Because of the huge energy fluctuations between thin silicon layers, the deposited energy calculated using surface linear energy transfer (LET) is imprecise under the incidence of heavy ions at very low energy (< 0.3 MeV/amu). The radial ionisation distribution range obtained by Geant4 decreases with an increase in ion mass at the same silicon depth (2 μm). Using radial ionisation distribution data in the electrical step of simulating a single event, the current peak value under irradiation by low-energy Xe ions is the highest value (229.6 μA), which reveals that low-kinetic-energy ions may cause damage larger than that caused by the incidence of high-kinetic-energy ions. Additionally, although the high-energy ions generate larger collected charges in the device, the larger deposited charges will minimise the resulting parasitic bipolar amplification gain.

使用 GEometry ANd Tracking (Geant4) 和 Synopsys Sentaurus 器件模拟分析了 20 nm 完全耗尽绝缘体上硅 (FDSOI) 晶体管在重离子照射下的响应。由于薄硅层之间的巨大能量波动，在非常低能量 (< 0.3 MeV/amu) 的重离子入射下，使用表面线性能量转移 (LET) 计算的沉积能量是不精确的。Geant4 获得的径向电离分布范围随着相同硅深度 (2 μm) 离子质量的增加而减小。在模拟单个事件的电步骤中使用径向电离分布数据，低能氙离子照射下的电流峰值为最高值（229.6 μA），这表明，与高动能离子的入射相比，低动能离子可能造成更大的损害。此外，虽然高能离子在器件中产生较大的收集电荷，但较大的沉积电荷将使由此产生的寄生双极放大增益最小化。