A study of reversible capture and emission processes of fabrication-caused interface and oxide traps in a carbon nanotube fet (cntfet) is performed. Drain-current-based measurement techniques are employed to investigate both the trap-related capture (fill) and the emission (release) process of these emerging three-terminal devices. The measurement techniques are based upon the systematic evaluation of the trap-induced time-dependent lateral shifts of periodically measured complete Id-Vgs curves. The techniques are conceptually demonstrated by means of transient simulations with a cntfet compact model containing a trap modeling adjunct network with different time constants for capture and emission of traps. Subsequently, the techniques are experimentally applied to a cntfet using dedicated laboratory equipment.

中文翻译：

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基于脉冲测量的 CNTFET 陷阱捕获和发射过程研究


对碳纳米管场效应晶体管 (cntfet) 中制造引起的界面和氧化物陷阱的可逆捕获和发射过程进行了研究。基于漏极电流的测量技术用于研究这些新兴三端器件的与陷阱相关的捕获（填充）和发射（释放）过程。测量技术基于对定期测量的完整 Id-Vgs 曲线的陷阱引起的时间相关横向位移的系统评估。这些技术通过使用 cntfet 紧凑模型进行瞬态模拟的方式在概念上进行了演示，该模型包含陷阱建模辅助网络，该网络具有用于捕获和发射陷阱的不同时间常数。随后，使用专用实验室设备将这些技术实验性地应用于碳纳米管场效应晶体管。