Impact of bias-temperature stress (BTS) has been assessed in a three-terminal vertical current driver fabricated by room temperature processing of IGZO/Ni/IGZO stack on a p-silicon substrate. Under normal working condition and at a low voltage, the driver exhibits 104 ON-OFF current ratio with remarkable 46 mV/decade subthreshold slope, because of 0.89 eV Schottky barrier presented by the Ni/IGZO interfaces and linear superposition of thermionic-field, thermionic and diode currents of the driver as obtained by bias dependent variable energy offsets between the Ni and the IGZO Fermi energy levels. Furthermore, Schottky gate eliminates charge trapping induced threshold voltage instability as commonly found in planar IGZO thin film transistors, as a result of which excellent current stability under both ON and OFF states was found even when bias stress of more than 5 times the nominal working bias was applied to the driver for 12 hours. Employing accelerated stress bias progressive current degradation of the driver was further induced and assessed in detail

中文翻译：

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偏置温度应力对室温制造的 IGZO/Ni/IGZO 陡亚阈值垂直电流驱动器的影响


通过在 p 硅衬底上对 IGZO/Ni/IGZO 堆栈进行室温处理而制造的三端子垂直电流驱动器中，评估了偏置温度应力 (BTS) 的影响。在正常工作条件和低电压下，由于 Ni/IGZO 界面呈现 0.89 eV 肖特基势垒以及热电子场、热离子的线性叠加，驱动器表现出 104 的开关电流比和显着的 46 mV/decade 亚阈值斜率。驱动器的二极管电流是通过 Ni 和 IGZO 费米能级之间的偏置相关变量能量偏移获得的。此外，肖特基栅极消除了平面 IGZO 薄膜晶体管中常见的电荷捕获引起的阈值电压不稳定性，因此即使在偏置应力超过标称工作偏置的 5 倍时，在导通和截止状态下也能实现出色的电流稳定性被施加到司机身上12个小时。采用加速应力偏置，进一步诱导和详细评估驱动器的渐进电流退化