2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes,ACS Photonics

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2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes
ACS Photonics ( IF 6.5 ) Pub Date : 2021-06-08 , DOI: 10.1021/acsphotonics.1c00287
Zhicheng Su ₁ , Naiyin Wang ₁ , Hark Hoe Tan _{1,

2} , Chennupati Jagadish _{1,

2}

Affiliation

The successful application of semiconductor nanostructures in devices has attracted intense interest in their carrier dynamics. Here an in-depth investigation of the carrier dynamics in novel layered InP nanomembranes with a large area of atomically sharp wurtzite-zincblende (WZ-ZB) interface is conducted for the first time by using various spectroscopic techniques. Two kinds of type II transitions in these nanomembranes are observed, which are from the ZB/WZ type II planar interface and stacking fault-induced ZB segments in the WZ phase layer. A strong two-dimensional carrier localization effect in the flat type II interface is demonstrated at low temperatures. As the excitation fluence increases, the occurrence of state filling can play an important role in the emission energy and lifetime of this type II transition. Thermal transfer of carriers from the type II interface 2D localization to the ZB conduction band results in the quenching of type II transitions at room temperature. Interesting novel emission polarization behaviors of different transitions in this InP nanomembrane are also highlighted. The polarization direction of the WZ and ZB emissions, as well as two kinds of type II transitions, are found to be perpendicular to each other. This study thus provides a deeper insight into the type II transitions in semiconductor nanostructures.

中文翻译：

新型分层 InP 纳米膜中纤锌矿-闪锌矿界面处的 2D 载流子定位

半导体纳米结构在器件中的成功应用引起了人们对其载流子动力学的浓厚兴趣。在这里，首次使用各种光谱技术对具有大面积原子级锋利纤锌矿-锌闪石 (WZ-ZB) 界面的新型层状 InP 纳米膜中的载流子动力学进行了深入研究。在这些纳米膜中观察到两种 II 型跃迁，它们来自 ZB/WZ II 型平面界面和 WZ 相层中的堆垛层错诱导的 ZB 段。在低温下证明了平面 II 型界面中的强二维载流子定位效应。随着激发注量的增加，状态填充的发生可以在这种 II 型跃迁的发射能量和寿命中发挥重要作用。载流子从 II 型界面二维定位到 ZB 导带的热转移导致室温下 II 型转变的猝灭。还强调了该 InP 纳米膜中不同跃迁的有趣的新型发射极化行为。发现 WZ 和 ZB 发射的偏振方向以及两种 II 型跃迁相互垂直。因此，这项研究为半导体纳米结构中的 II 型跃迁提供了更深入的了解。以及两种类型的 II 过渡，被发现是相互垂直的。因此，这项研究为半导体纳米结构中的 II 型跃迁提供了更深入的了解。以及两种类型的 II 过渡，被发现是相互垂直的。因此，这项研究为半导体纳米结构中的 II 型跃迁提供了更深入的了解。

更新日期：2021-06-17

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