The CuInSe₂ quantum dots (QDs) are “green” infrared optoelectronic materials with fruitful optically active point defects, but their roles in photodynamics remain unclear. We observe different types of stoichiometry-sensitive emission bands spanning red-near-infrared region in strongly quantum confined CuInSe₂ QDs. The saturation of photoluminescence intensity versus excitation power follows law I ∝ P ^k with 0.54<k <0.94 that is characteristic of defect dominated photon emission. The radiative quantum transitions have lifetimes of 15.2–32.0μs that are far longer than usual interband transition lifetimes by three orders of magnitude. Multiple defects-involved electron transition processes are revealed.

CuInSe ₂量子点 (QD) 是“绿色”红外光电材料，具有丰富的光学活性点缺陷，但它们在光动力学中的作用仍不清楚。我们在强量子限制的 CuInSe ₂ QD 中观察到跨越红色近红外区域的不同类型的化学计量敏感发射带。光致发光强度与激发功率的饱和度遵循I ∝ P ^k定律，其中 0.54< k <0.94，这是缺陷主导的光子发射的特征。辐射量子跃迁的寿命为 15.2–32.0 μ s 远比通常的带间跃迁寿命长三个数量级。揭示了涉及多个缺陷的电子跃迁过程。