We demonstrate the improved device performances by using the structure of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film coated onto the indium tin oxide (ITO) anodic electrode annealed at 400 °C under the normal ambient. The ITO thin films show the improved film quality with decreased dislocation density and lattice strain as annealing temperature increases. The spin-coated PEDOT:PSS film smoothens the wrinkle kind of surface morphology of the ITO film annealed at 400 °C. The annealed ITO (400 °C) with PEDOT:PSS interlayer improves the hole-current density in the hole-only devices (HODs) having the device structure of ITO/PEDOT:PSS/N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine as hole-transporting layer/Al. It enhances the efficiency of organic photovoltaic devices [ITO (annealed)/PEDOT:PSS/P3HT:PCBM (active layer)/LiF/Al] by three times higher (1.69 %) when compared to that (0.48 %) of pristine ITO based OPV device. These results show that the annealing of ITO film at the high temperature of 400 °C under the normal ambient improves the film quality and lowers the potential energy barrier at ITO/PEDOT:PSS interface for effective hole injection/extraction process, resulting in the enhanced device electrical performances.

我们通过使用聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）膜的结构来证明改进的器件性能，该膜涂覆在通常在 400°C 下退火的氧化铟锡（ITO）阳极上。周围。随着退火温度的升高，ITO 薄膜表现出改善的薄膜质量，同时降低了位错密度和晶格应变。旋涂的 PEDOT:PSS 膜使在 400°C 下退火的 ITO 膜的表面形貌变得平滑。带有 PEDOT:PSS 中间层的退火 ITO (400 °C) 提高了具有 ITO/PEDOT:PSS/N,N'-Bis(3-methylphenyl) 器件结构的空穴器件 (HOD) 中的空穴电流密度-N,N'-二苯基联苯胺作为空穴传输层/Al。它提高了有机光伏器件的效率 [ITO（退火）/PEDOT:PSS/P3HT: PCBM（活性层）/LiF/Al] 与基于原始 ITO 的 OPV 器件 (0.48%) 相比高出三倍 (1.69%)。这些结果表明，ITO 薄膜在 400 °C 的高温下在正常环境下的退火提高了薄膜质量并降低了 ITO/PEDOT:PSS 界面处的势能势垒，以实现有效的空穴注入/提取过程，从而增强器件电气性能。