For this study, we synthesized Aurivillius Bi₅Ti₃FeO₁₅ ceramic using the generic solid-state reaction route and then performed room-temperature X-ray diffraction to confirm that the compound had a single phase with no impurities. The surface morphology of the prepared sample was observed to contain microstructural grains approximately 0.2–2 µm in size. The dielectric properties of the sample were determined as a function of frequency in a range of approximately 100 Hz to 1 MHz at various temperatures (303 K ≤ T ≤ 773 K). Nyquist plots of the impedance data were found to exhibit a semi-circular arc in the high-temperature region, which is explained by the equivalent electrical circuit (R₁C₁)(R₂QC₂), where R₁ and R₂ represent the resistances associated with the grains and grain boundaries, respectively, C₁ and C₂ are the respective capacitances, and Q is the constant phase element (CPE), which accounts for non-Debye type of behavior. Our results indicate that both the resistance and capacitance of the grain boundaries are more prominent than those of the grains. The alternating current (ac) conductivity data were analyzed based on the Jonscher universal power law, which indicated that the conduction process is dominated by the hopping mechanism. The calculated activation energies of the relaxation and conduction processes were very similar (0.32 to 0.53 eV), from which we conclude that the same type of charge carriers are involved in both processes.

在本研究中，我们使用通用固态反应路线合成了 Aurivilius Bi ₅ Ti ₃ FeO ₁₅陶瓷，然后进行室温 X 射线衍射以确认该化合物为单相，不含杂质。观察到所制备样品的表面形态包含大小约为 0.2-2 µm 的微结构晶粒。在各种温度 (303 K ≤ T ≤ 773 K)下，样品的介电特性被确定为大约 100 Hz 至 1 MHz 范围内频率的函数。阻抗数据的奈奎斯特图被发现在高温区域呈现半圆弧，这可以由等效电路 ( R ₁ C₁ )( R ₂ QC ₂ )，其中R ₁和R _{2 分别}代表与晶粒和晶界相关的电阻，C ₁和C ₂是各自的电容，Q是恒定相位元素 (CPE)，它解释了非德拜类型的行为。我们的结果表明，晶界的电阻和电容都比晶粒的电阻和电容更为突出。基于Jonscher通用幂律分析交流电（ac）电导率数据，表明传导过程受跳跃机制支配。弛豫和传导过程的计算活化能非常相似（0.32 到 0.53 eV），由此我们得出结论，这两个过程都涉及相同类型的电荷载流子。