Lead halide perovskites have received increasing attention recently as a candidate material in various optoelectronic areas because of their high performance as light absorbers. Herein, we report the growth of CsPbI₃ nanobelts via a solution process. A single-crystalline CsPbI₃ nanobelt with uniform morphology can be achieved by controlling the amount of PbI₂. A single-crystalline CsPbI₃ nanobelt possesses a mean width, length, and thickness of 100 nm, 5 µm, and 20 nm, respectively. In this work, photodetectors (PDs) based on individual CsPbI₃ nanobelts are constructed and found to perform well with an external quantum efficiency and responsivity of 2.39 × 10⁵% and 770 A/W, respectively. The PDs also show a high detectivity of up to 3.12 × 10¹² Jones, which is at par with that of Si PDs. The PDs developed in this work exhibit great promise in various optoelectronic nanodevices.

由于其作为光吸收剂的高性能，卤化铅钙钛矿最近作为各种光电领域的候选材料受到越来越多的关注。在此，我们报告了 CsPbI ₃纳米带通过溶液过程的生长。通过控制PbI ₂的量可以实现具有均匀形态的单晶CsPbI ₃纳米带。单晶 CsPbI ₃纳米带的平均宽度、长度和厚度分别为 100 nm、5 µm 和 20 nm。在这项工作中，构建了基于单个 CsPbI ₃纳米带的光电探测器 (PD)并发现其性能良好，外部量子效率和响应度为 2.39 × 10 ⁵% 和 770 A/W，分别。PD 还显示出高达 3.12 × 10 ¹² Jones的高探测率，与 Si PD 相当。在这项工作中开发的 PD 在各种光电纳米器件中表现出巨大的潜力。