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Dielectric Properties of Relaxor CuCrO2 at Room Temperature
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-06-04 , DOI: 10.1002/pssb.202100136
Iliana N. Apostolova 1 , Angel T. Apostolov 2 , Steffen Trimper 3 , Julia M. Wesselinowa 4
Affiliation  

The dielectric properties of CuCrO2 bulk and thin films are studied by evaluating the complex dielectric function ε. In addition to the small peak near the Néel temperature T N , a secondary broad peak is found at high temperatures around T m = 450 K T N . As a feature of relaxor ferroelectrics, the maximum temperature T m increases with increasing frequency. The real part of ε decreases with increasing magnetic field h and the peak at T N vanishes. The secondary peak becomes smaller and is broadened with increasing magnetic field. ε increases with increasing film thickness. Near T m , the dielectric function offers a critical behavior expressed by an exponent γ = 1.74 . Using scaling arguments, critical exponents β = 0.13 and δ = 13.38 are deduced. The exponents depend on the film thickness. While β increases, the exponent γ is reduced with increasing film thickness.

中文翻译:

室温下弛豫CuCrO2的介电特性

通过评估复介电函数ε来研究CuCrO 2体膜和薄膜的介电特性。除了 Néel 温度附近的小峰 N ,在周围的高温下发现了一个次要的宽峰 = 450 N . 作为弛豫铁电体的一个特征,最高温度 随着频率的增加而增加。ε的实部随着磁场h 的增加而减小,峰值在 N 消失。次级峰变小并随着磁场的增加而变宽。ε随着薄膜厚度的增加而增加。靠近 ,介电函数提供了一个由指数表示的临界行为 γ = 1.74 . 使用缩放参数,临界指数 β = 0.13 δ = 13.38 被推导出来。指数取决于薄膜厚度。当β增加时,指数γ随着薄膜厚度的增加而减少。
更新日期:2021-06-04
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