The hydrogen donor impurity states are calculated in In0.65Ga0.35As0.75P0.25/InP coaxial double quantum well wires by the plane wave method under the theoretical framework of effective mass envelope function approximation. The binding energies of impurity in 1s state and 2p± state are obtained as the functions of impurity position, distance between the inner and outer quantum wires, magnetic and electric field strengths. Transition energies are calculated as the functions of impurity position, distance between the inner and outer quantum wires. The effects of quantum wire thickness and distance of quantum wires on impurity states are analyzed in detail. It is found that the effects of electric field and magnetic field on binding energy of 1s state are different for impurity located at different positions.

中文翻译：

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InGaAsP/InP同轴双量子阱线中的杂质态在电场和磁场的影响下

氢供体杂质状态计算为在0.65镓0.35作为0.75磷0.25/磷有效质量包络函数逼近理论框架下的平面波法同轴双量子阱线。杂质的结合能1s状态和2p±状态是杂质位置、内外量子线之间的距离、磁场和电场强度的函数。跃迁能被计算为杂质位置、内部和外部量子线之间的距离的函数。详细分析了量子线厚度和量子线距离对杂质态的影响。发现电场和磁场对结合能的影响1s不同位置的杂质状态不同。