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Anisotropic frictional properties between Ti3C2Tx MXene/SiO2 layer-dependent heterojunctions
Journal of Science: Advanced Materials and Devices ( IF 6.7 ) Pub Date : 2021-06-05 , DOI: 10.1016/j.jsamd.2021.05.006
Li Sun , Nan Sun , Yongchen Liu , Chengming Jiang

Two-dimensional (2D) Ti3C2Tx MXene sheet possesses its interesting electrical and optical properties and has thus aroused widespread interest in a wide range of flexible optoelectronic device applications. A clear understanding of the friction behavior and performance, of MXene and other transparent materials (e.g., SiO2) will enable these promising applications. In this study, the frictional behaviors between the SiO2 (100) plane and the MXene sheet have been measured by a lateral force atomic force microscopy (AFM), based on the realization of the friction experiments in the single crystal heterojunction. The results on the two-dimensional single–layer interface between MXene and SiO2 clearly show that the corresponding heterostructure owns a strong friction anisotropy with a six-fold symmetry. The friction coefficient for the misaligned contact is 0.067, while it is 0.031 for the aligned one. We find that the measurement of friction anisotropy is highly related to the number of atomic layers of MXene. The increase of the layer number is found to significantly reduce the friction anisotropy and beyon 10 layers it is no longer related to the thickness. These findings will have general applicability and can be used in other MXene heterojunction configurations to realize the advantages of adaptive nanodevices and the development of flexible optoelectronics.



中文翻译:

Ti3C2Tx MXene/SiO2 层相关异质结之间的各向异性摩擦特性

二维 (2D) Ti 3 C 2 T x MXene 片材具有有趣的电学和光学特性,因此引起了广泛的柔性光电器件应用的广泛兴趣。对 MXene 和其他透明材料(例如 SiO 2)的摩擦行为和性能的清楚了解将使这些有前途的应用成为可能。在这项研究中,基于单晶异质结摩擦实验的实现,通过横向力原子力显微镜 (AFM) 测量了 SiO 2 (100) 平面和 MXene 片之间的摩擦行为。MXene和SiO 2之间二维单层界面的结果清楚地表明相应的异质结构具有六重对称性的强摩擦各向异性。未对准接触的摩擦系数为 0.067,而对准接触的摩擦系数为 0.031。我们发现摩擦各向异性的测量与 MXene 的原子层数高度相关。发现层数的增加显着降低了摩擦各向异性,超过 10 层它不再与厚度相关。这些发现将具有普遍适用性,可用于其他 MXene 异质结配置,以实现自适应纳米器件的优势和柔性光电子学的发展。

更新日期:2021-08-11
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