Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.

石墨烯纳米带 (GNR) 是一种新兴的候选材料，可以挑战当前基于半导体的技术的地位。在这项工作中，我们将扶手椅石墨烯纳米带场效应晶体管 (AGNRFET) 的模型扩展到高 k 电介质领域，并检查量子电容对其瞬态现象的影响。该模型使用 Verilog-A 进行编码，并通过 SPICE 仿真进行评估。我们已经考虑了有和没有量子电容影响的扩展模型之间的比较。仿真结果显示了一个现实场景，其中量子电容的影响显着影响了电路设计中的瞬态行为。这证明所提出的模型对于未来基于石墨烯的应用的电路设计是有价值的帮助。