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Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces
Solid-State Electronics ( IF 1.4 ) Pub Date : 2021-06-04 , DOI: 10.1016/j.sse.2021.108115
Tae-Hyeon Kil , Munetaka Noguchi , Hiroshi Watanabe , Koji Kita

The positive flat-band voltage (VFB) shifts of 4H-SiC (0001) MOS capacitors with Al2O3/SiO2 dielectric layers were systematically investigated. After nitridation, there was a negative shift of VFB due to the dipole layer at the SiO2/4H-SiC interface induced by Si-N bonds. However, with Al2O3 layer deposition on thermally grown oxide, an additional dipole layer was formed at the Al2O3/SiO2 interface, which induced positive shift of VFB. Interface state density was estimated to show that the Al2O3 fabrication process had no impact on the quality of SiO2/4H-SiC interface.



中文翻译:

由氧化物-半导体和氧化物-氧化物界面处的界面偶极层形成引起的 4H-SiC MOS 电容器的平带电压漂移

系统地研究了具有 Al 2 O 3 /SiO 2介电层的 4H-SiC (0001) MOS 电容器的正平带电压 (V FB ) 偏移。氮化后,由于Si-N键诱导SiO 2 /4H-SiC界面处的偶极层,V FB发生负移。然而,随着Al 2 O 3层沉积在热生长的氧化物上,在Al 2 O 3 /SiO 2界面处形成了额外的偶极层,这导致了V FB 的正位移。估计界面态密度以表明 Al 2 O3制备工艺对SiO 2 /4H-SiC界面的质量没有影响。

更新日期:2021-06-05
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