In this work, the effects of physical dimensions such as length, width and thickness as well as the mode of vibration and the number of anchors on the performance of longitudinal thin film piezoelectric on silicon (TPoS) MEMS resonators have been studied. TPoS resonators, designed for a resonant frequency of around 1 GHz, were fabricated with a 4 mask CMOS compatible process. A 225 μm wide resonator excited in its 23rd order had an unloaded quality factor of 9453 (in vacuum), which is the highest value reported so far for similar resonators, motional resistance of 107 Ω and linear thermal coefficient of frequency of -28.4 ppm. We have also studied and modeled the different loss mechanisms in these devices. The model matches well with measured results for resonators of different geometries, modes of vibrations and number of anchors. [2020-0397]

中文翻译：

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具有改进的 1 GHz 性能的 TPoS MEMS 谐振器的设计、建模和制造


在这项工作中，研究了长度、宽度和厚度等物理尺寸以及振动模式和锚数量对纵向薄膜硅压电（TPoS）MEMS谐振器性能的影响。 TPoS 谐振器专为 1 GHz 左右的谐振频率而设计，采用 4 掩模 CMOS 兼容工艺制造。以 23 阶激励的 225 μm 宽谐振器的空载品质因数为 9453（真空中），这是迄今为止报道的类似谐振器的最高值，动阻为 107 Ω，频率线性热系数为 -28.4 ppm。我们还研究并建模了这些设备中的不同损耗机制。该模型与不同几何形状、振动模式和锚数量的谐振器的测量结果非常匹配。 [2020-0397]