In this study, a novel chemical–mechanical planarization (CMP) slurry that can perform self-stop polishing was designed. The essential aspects for self-stop polishing are precise design of a nonionic polymer type, molecular weight, and molecular concentration of a self-stopping chemical agent. A good example is polyvinylpyrrolidone (PVP) with a molecular weight of 1300 k and molecular concentration of 0.3 wt%. In this chemical design, the adsorption of a polymer hindrance layer on the surface film topography during CMP can become sufficient under self-stop conditions such as a specific polishing time (e.g., 4 min). The self-stop polishing mechanism is associated with the presence of a relative local pressure difference on the surface film topography. The proper adsorption of the polymer hindrance layer on the surface topography can achieve a uniform relative local pressure distribution globally, and the film polishing rate can achieve adequate planarization of the surface film topography.

在这项研究中，设计了一种可以进行自停止抛光的新型化学机械平坦化 (CMP) 浆料。自停抛光的基本方面是精确设计非离子聚合物类型、分子量和自停化学试剂的分子浓度。一个很好的例子是分子量为 1300 k 且分子浓度为 0.3 wt% 的聚乙烯吡咯烷酮 (PVP)。在这种化学设计中，在 CMP 过程中，聚合物阻碍层在表面膜形貌上的吸附可以在自停止条件下变得足够，例如特定的抛光时间（例如，4 分钟）。自停止抛光机制与表面膜形貌上存在相对局部压力差有关。