In this work, the impact of the quantum dot parameters, including dot size, and material composition on the optoelectronic performance of quantum dot infrared photodetectors (QDIPs) is systematically studied. The QDIP is based on the intra-valence band transitions in Zn_1-xCd_xSe QDs. The eigen energies and wavefunction of the hole states are computed under the framework of the multi-band k.p model. The obtained electronic structure is further utilized to calculate the dark current density, responsivity, and detectivity of QDIPs. An increase in CdSe content markedly reduces the dark current density as well as improves the responsivity. As a result, detectivity enhances significantly. Raising the QD size also brings enhancement in the detectivity. Moreover, peak response wavelength depends on the CdSe content and dot dimensions. These results might provide new directions for the development of p-type II-VI QDs based QDIP.

在这项工作中，系统研究了量子点参数（包括点尺寸和材料成分）对量子点红外光电探测器（QDIP）光电性能的影响。QDIP 基于 Zn _1-x Cd _x Se QD 中的价带内跃迁。在多波段kp框架下计算空穴态的本征能量和波函数模型。获得的电子结构进一步用于计算 QDIP 的暗电流密度、响应度和探测率。CdSe 含量的增加显着降低了暗电流密度并提高了响应度。结果，检测能力显着提高。提高 QD 尺寸也带来了检测能力的提高。此外，峰值响应波长取决于 CdSe 含量和点尺寸。这些结果可能为基于 p 型 II-VI QD 的 QDIP 的发展提供新的方向。