The effect of crystallography and elastic coefficient heterogeneity between a thin film and its substrate has been theoretically investigated on the shear-coupled grain boundary migration in the film. A drag force associated with the elastic energy has been determined by a disclination-based description of the grain boundary migration. Considering also the capillarity driving force derived from the Burke-Turnbull model of normal grain growth, it has been found in case of an Al thin film that the grain growth stagnation occurs beyond a critical film thickness that decreases as the shear modulus and/or Poisson’s ratio of the substrate increase from the corresponding values of the film. In case of \([001 ]\) grain boundaries in a Cu thin film, the effect of crystallography on the GB displacement has also been characterized.

从理论上研究了薄膜与其衬底之间的晶体学和弹性系数异质性对薄膜中剪切耦合晶界迁移的影响。与弹性能相关的拖曳力已由基于向错的晶界迁移描述确定。还考虑源自正常晶粒生长的 Burke-Turnbull 模型的毛细作用驱动力，已经发现在 Al 薄膜的情况下，晶粒生长停滞发生在超过临界膜厚度时，该厚度随着剪切模量和/或泊松系数而降低基材的比率从相应的薄膜值增加。在\([001 ]\) 的情况下 Cu薄膜中的晶界，晶体学对GB位移的影响也已被表征。