Nanolayers of pure boron (PureB) deposited on Si form p⁺-type regions at deposition temperatures from 50 °C to 700 °C. At 700 °C, commercial PureB photodiodes are produced for advanced detection systems including those in extreme-ultraviolet (EUV) lithography systems. In addition, potent MEMS applications of B-nanolayers have been demonstrated. Attractive diode characteristics were also found for devices where Ga wetting-layers were applied to the Si surface, both with/without an additional B capping-layer. The resulting “PureGa” and “PureGaB” diodes are assessed here in the light of investigations focused on the B-Si interface properties in PureB diodes. A very high density of acceptor states at the Si interface appears to be related to the p-dopant property of both B and Ga, even though diffusion into the Si is not expected for the applied processing temperatures from 50 °C to ~ 450 °C.

在 50 °C 至 700 °C 的沉积温度下，沉积在 Si 上的纯硼 (PureB) 纳米层形成p ⁺型区域。在 700 °C 下，商业 PureB 光电二极管可用于高级检测系统，包括极紫外 (EUV) 光刻系统中的检测系统。此外，已经证明了 B 纳米层的有效 MEMS 应用。对于在 Si 表面应用 Ga 润湿层的器件，无论有/没有额外的 B 覆盖层，也发现了有吸引力的二极管特性。根据对 PureB 二极管中 B-Si 界面特性的研究，此处评估了由此产生的“PureGa”和“PureGaB”二极管。Si 界面处非常高密度的受主态似乎与p-B 和 Ga 的掺杂特性，即使在 50 °C 至 ~ 450 °C 的应用加工温度下预计不会扩散到 Si 中。