Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO₂:Al₂O₃based metal-insulator-metal structures devised using atomic layer deposition. Dependences of electrical behavior on HfO₂:Al₂O₃ cycle ratio is studied. An explanation for the differences between the Resistive Switching properties of the samples is proposed, based on the distribution of HfAlO_x layers of the sample. Dependence of the RS properties of the samples on their growth temperature is discussed.

中文翻译：

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在基于HfO ₂的 ReRAM 器件中，通过间隔 HfAlO _x层和生长温度有效控制灯丝效率

电阻式开关随机存取存储器作为预期的非易失性存储器正在被彻底研究。在本文中，我们报告了使用原子层沉积设计的基于HfO ₂ :Al ₂ O ₃的金属-绝缘体-金属结构的电气特性。研究了电行为对 HfO ₂ :Al ₂ O ₃循环比的依赖性。基于样品的 HfAlO _x层的分布，提出了对样品电阻开关特性之间差异的解释。讨论了样品的 RS 特性对其生长温度的依赖性。