Abstract

The comparative analysis of the kinetics of the bulk crystallization of AsSe_1.5Bi_x glasses (х = 0, 0.01, and 0.05) in the temperature range 210–260°C is conducted by the data of density measurement using the generalized Kolmogorov–Avrami equation and the results of phase and differential thermal analysis. The kinetics of the surface crystallization of As₂Se₃ glass containing 0.4 at % Bi at 270 and 310°C and the parameters of the specific electrical conductivity and microhardness of the quenched semiconducting glass-ceramics at different stages of thermal treatment are studied.

中文翻译：

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铋添加剂对As2Se3玻璃结晶动力学和机理的影响

摘要

通过使用广义 Kolmogorov-Avrami 方程的密度测量数据，对 AsSe _1.5 Bi _x玻璃（х = 0、0.01和 0.05）在 210-260°C 温度范围内的块体结晶动力学进行了比较分析以及相和差热分析的结果。研究了含 0.4 at% Bi的 As ₂ Se ₃玻璃在 270 和 310°C下的表面结晶动力学以及不同热处理阶段淬火半导体微晶玻璃的比电导率和显微硬度参数。