This paper presents the technology of fabrication of T-shaped gates for GaAs transistors using optical lithography and a unique method of directional angular deposition of thin aluminum films. The minimal foot length of the T-shaped gate formed using the developed technology was L_g = 25 nm. GaAs HEMT with a T-shaped gate formed using directional angular deposition demonstrated the drain-source saturation current I_dss = 140 mA/mm, the gate-drain breakdown voltage U_gdbreak = 9 V, and the cutoff voltage U_coff = 2 V.

中文翻译：

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使用薄铝膜的定向角沉积形成纳米级 T 形栅极

本文介绍了使用光刻技术为 GaAs 晶体管制造T形栅极的技术和一种独特的铝薄膜定向角沉积方法。使用开发的技术形成的T形栅极的最小脚长为 L _g = 25 nm。具有使用定向角沉积形成的T形栅极的GaAs HEMT表明漏源饱和电流 I _dss = 140 mA/mm，栅漏击穿电压 U _gdbreak = 9 V，截止电压 U _coff = 2 V。