We report on the electrical behavior of Metal/n-GaAs Schottky structure, using Silvaco-Atlas software. To study the effect of metal work function ϕ_m on the performance of various parameters such as saturation current I_s, ideality factor n, and barrier height ϕ_b, we examine a large number of contact materials having different ϕ_m at room temperature (300 K). The results show a significant dependence between ϕ_m and the electrical parameters. It is observed that the smaller values of the threshold voltage V_i are obtained for low ϕ_m. We also find that metals within ϕ_m [4.42–5.31] eV give lower n. A linear increase of the barrier height ϕ_b is mentioned for ϕ_m [4.33–5.37] which is in accordance with the theoretical relationship. In addition, the selection of four different metal contact (Cu, Au, Pt, and Ni) is devoted to simulate the Metal/n-GaAs Schottky structure in a wide temperature range of (100–400 K). This allows us to extract and discuss the influence of temperature on the performance of our proposed device.

中文翻译：

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不同触点的 n-GaAs 肖特基二极管的电气特性：电流-电压的温度依赖性

我们使用 Silvaco-Atlas 软件报告金属/n-GaAs 肖特基结构的电学行为。研究的金属的功函数φ的影响_米各种参数的性能如饱和电流I_小号，理想因子n，以及势垒高度φ _b，我们研究了大量具有不同φ接触材料的_米在室温（300 K)。结果显示 ϕ _m与电气参数之间存在显着相关性。观察到对于低φ _m获得较小的阈值电压V _i值。我们还发现 ϕ _m范围内的金属 [4.42–5.31] eV 给出较低的 n。对于 ϕ _m [4.33–5.37]，提到了势垒高度 ϕ _{b 的}线性增加，这与理论关系一致。此外，选择了四种不同的金属触点（Cu、Au、Pt 和 Ni）来模拟金属/n-GaAs 肖特基结构在很宽的温度范围内（100-400 K）。这使我们能够提取和讨论温度对我们提出的设备性能的影响。