This study assessed the inactivation kinetics of 150 keV low-energy X-ray on mono-/co-culture biofilms of Listeria monocytogenes and Pseudomonas fluorescens on three different food-contact-surfaces (polyethylene, acrylic, and stainless steel). The results indicated that the level of biofilm formation of mono-/co-cultures of L. monocytogenes and P. fluorescens was the highest on acrylic. The mono-culture L. monocytogenes biofilm cells exhibited higher resistance to the low-energy X-rays than the corresponding mono-culture P. fluorescens biofilm cells, regardless of surface types. Furthermore, co-culture had enhanced the resistance of both P. fluorescens and L. monocytogenes biofilm cells to the low-energy X-ray. Two kinetic models for the inactivation process were investigated, including (i) Linear model and (ii) Weibull model. Based on R², RMSE and AIC analysis, the Weibull model was superior in fitting the inactivation curves of low-energy X-ray on L. monocytogenes in mono-/co-culture biofilms with P. fluorescens. For mono-culture biofilms, the irradiation achieved the t_R1 value (derived from the Weibull model, i.e., the dose required for the first 1-log reduction) of 46.36–50.81 Gy for L. monocytogenes and the t_R1 value of 25.61–31.33 Gy for P. fluorescens. For co-culture biofilms, higher t_R1 values for L. monocytogenes (59.54–70.77 Gy) and P. fluorescens (32.73–45.13 Gy) were yielded than those for their individual counterparts in mono-culture biofilm.

本研究评估了 150 keV 低能 X 射线对三种不同食品接触表面（聚乙烯、丙烯酸和不锈钢）上单核细胞增生李斯特菌和荧光假单胞菌的单/共培养生物膜的灭活动力学。结果表明，单核细胞增生李斯特菌和荧光假单胞菌的单/共培养物的生物膜形成水平在丙烯酸​​上最高。无论表面类型如何，单培养单核细胞增生李斯特菌生物膜细胞对低能 X 射线的抵抗力都高于相应的单培养荧光假单胞菌生物膜细胞。此外，共培养增强了荧光假单胞菌和荧光假单胞菌的抗性。单核细胞增生李斯特菌生物膜细胞的低能 X 射线。研究了灭活过程的两个动力学模型，包括 (i) 线性模型和 (ii) Weibull 模型。基于R ²、RMSE 和AIC 分析，Weibull 模型在拟合荧光假单胞菌单/共培养生物膜中单核细胞增生李斯特菌的低能X 射线灭活曲线方面具有优越性。对于单培养生物膜，辐照达到了46.36–50.81 Gy 的单核细胞增生李斯特菌的 t _R1值（源自 Weibull 模型，即第一个 1-log 减少所需的剂量）和 25.61–的 t _R1值荧光假单胞菌为 31.33 Gy 。对于共培养生物膜，更高的 t单核细胞增生李斯特菌(59.54–70.77 Gy) 和荧光假单胞菌(32.73–45.13 Gy) 的_R1值比单一培养生物膜中的单个对应物的_R1值高。