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Novel structure of a sidewall-insulated hollow electrode for micro electrochemical machining
Precision Engineering ( IF 3.5 ) Pub Date : 2021-06-01 , DOI: 10.1016/j.precisioneng.2021.05.009
Guodong Liu , Hao Tong , Yong Li , Hao Zhong

Adopting the sidewall-insulated hollow electrode (SIHE) is an ideal approach to achieve electrolyte-refresh and stray corrosion inhibition functions in micro electrochemical machining (ECM) processes. Most of the traditional SIHEs are made of metal substrate and non-metal thin films. The insulating film has poor durability, and the preparation approach of the traditional SIHE is complex and has limited repeatability. This research presents a novel structure of a SIHE with an insulated substrate and an internal conductive film. The machining performance of the novel SIHE is primarily verified by a potential distribution analysis in the numerical simulation. According to the concept of the novel SIHE, a silver-plated glass tube electrode (SPGTE) is presented: the glass tube acts as the insulated substrate, and the plated silver layer acts as the working cathode. Then, a fabrication process for the SPGTE is proposed. Silver layers are tightly bonded on the glass tube surface by electroless plating. The thickness of the silver layer is approximately 3.5 μm, and its electrical resistivity is approximately 5 × 10−5 Ω cm. In micro ECM experiments, microstructures with steep sidewalls with taper angles of <5° are machined, which is attributed to the stray corrosion inhibition of the insulated substrate. Micro holes with an aspect ratio of approximately 3 are machined. There is no accumulation of electrolytic products and short circuits, which verifies the excellent electrolyte-fresh performance. Compared with the traditional SIHEs, the novel SIHE could provide a simpler and more reliable way of fabricating sidewall-insulated electrodes. The proposed electrode structure can further inspire new electrode preparation schemes based on new substrate materials and film preparation approaches.



中文翻译:

用于微电化学加工的侧壁绝缘中空电极的新型结构

采用侧壁绝缘中空电极(SIHE)是在微电化学加工(ECM)工艺中实现电解液更新和杂散腐蚀抑制功能的理想方法。传统的SIHE大多由金属基板和非金属薄膜制成。绝缘膜耐久性差,传统SIHE制备方法复杂,重复性有限。这项研究提出了一种具有绝缘基板和内部导电膜的 SIHE 的新型结构。新型 SIHE 的加工性能主要通过数值模拟中的电位分布分析得到验证。根据新型SIHE的概念,提出了一种镀银玻璃管电极(SPGTE):玻璃管作为绝缘基板,镀银层作为工作阴极。然后,提出了 SPGTE 的制造工艺。银层通过化学镀紧密结合在玻璃管表面。银层的厚度约为 3.5 μm,其电阻率约为 5 × 10-5 Ω cm。在微 ECM 实验中,加工锥角 <5° 的陡峭侧壁的微结构,这归因于绝缘基板的杂散腐蚀抑制。加工纵横比约为 3 的微孔。没有电解产物的堆积和短路,验证了优异的电解液新鲜性能。与传统的 SIHE 相比,新型 SIHE 可以提供一种更简单、更可靠的制造侧壁绝缘电极的方法。

更新日期:2021-06-08
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