Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions.

中文翻译：

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单片隧道结发光二极管实现 110 nm 宽光谱宽度


对单片堆叠 InGaN 发光二极管 (LED) 的表征和结构设计进行了数值研究，试图追求多色发光和宽光谱宽度。详细分析了能带配置、载流子分布和带间跃迁等关键物理特性，这些特性也可用来帮助证明所研究的 LED 结构的所需特性。适当调整多量子阱的组成以及每个单元堆叠LED中量子势垒的厚度，以简化串联LED结构并优化整体发射光谱。经过优化，仅用三个单元堆叠 LED 和两个隧道结演示了发射光谱宽度约为 110 nm（半高全宽）的单片隧道结 LED。