An Operational Transconductance Amplifier (OTA) designed with SiGe-source nanowire Tunnel-FETs is presented and compared with OTAs designed with Si nanowire (NW) TFETs and Si NW MOSFETs with and without the effect of gate current (I_G). The devices were modeled using Verilog-A language through lookup tables obtained by experimental data and they were used to simulate the OTA circuits. It was observed that, when the I_G is negligible, there is a trade-off between the DC open loop gain (A_V0) and the gain-bandwidth product (GBW) of these circuits. The Si NW MOSFET OTA presented the lowest A_V0 (52 dB) but the largest GBW (9.5 MHz). The largest gain was obtained by the Si NW TFET (97 dB) but it also presents the lowest GBW (30 kHz). The SiGe-source TFET stands in the middle, with an A_V0 of 88 dB and a GBW of 715 kHz. However, when I_G is not negligible and included in the model, the gain of the TFET OTAs decreases considerably, down to 38.3 dB in the case of the Si TFET and down to 52.6 dB in the case of the SiGe-source TFET. This decrease in gain is mostly caused by an alteration in the desired bias point in the second stage of the OTA due to the change of the output voltage and bias currents. This issue possibly can be mitigated by using circuit design strategies. Nevertheless, the SiGe-source TFET OTA is less impacted by the gate current than the Si TFET OTA and still presents a larger gain than the Si NW MOS OTA (52.6 dB against 50 dB) when the I_G is considered.

设计为与硅锗源纳米线隧道的FET运算跨导放大器（OTA）被呈现，并与设计有Si纳米线（NW）的TFET和Si NW的MOSFET具有和不具有栅极电流的（I效果在线旅行社相比_ģ）。通过实验数据获得的查找表，使用 Verilog-A 语言对设备进行建模，并使用它们来模拟 OTA 电路。据观察，当 I _G可忽略不计时，这些电路的 DC 开环增益 (A _V0 ) 和增益带宽积 (GBW)之间存在折衷。Si NW MOSFET OTA 呈现最低的 A _V0(52 dB) 但最大的 GBW (9.5 MHz)。Si NW TFET 获得最大增益 (97 dB)，但它也呈现最低 GBW (30 kHz)。SiGe 源 TFET 位于中间，A _V0为 88 dB，GBW 为 715 kHz。然而，当我_G不可忽略并包含在模型中，TFET OTA 的增益显着降低，在 Si TFET 的情况下降至 38.3 dB，在 SiGe 源 TFET 的情况下降至 52.6 dB。这种增益下降主要是由于输出电压和偏置电流的变化导致 OTA 的第二级中所需偏置点的变化造成的。这个问题可能可以通过使用电路设计策略来缓解。尽管如此，当考虑I _G时，SiGe 源 TFET OTA 受栅极电流的影响比 Si TFET OTA 小，并且仍然比 Si NW MOS OTA 具有更大的增益（52.6 dB 对 50 dB）。