This paper deals with the behavior of degradation by NBTI effect in pMOS junctionless nanowire transistors (JNTs). The analysis has been performed through measurements followed by 3D numerical simulations and has shown that the increase in the oxygen precursors density close to the interface leads to the reduction of the saturation in the NBTI effect when the devices operate in partial depletion regime. Such effect can be associated to the change in the flatband voltage to more negative values as well as the threshold voltage with the increase in the precursor density. In the sequence of the work, it was shown that, as the operation temperature rises, there is an increase in the degradation of the threshold voltage due to NBTI, which is more pronounced for larger gate voltages. It was concluded that this effect could be associated to the increase in the recombination rate with the temperature, which enables the occupation of a larger amount of traps.

本文讨论了 pMOS 无结纳米线晶体管 (JNT) 中 NBTI 效应的退化行为。该分析是通过测量和 3D 数值模拟进行的，并且表明当器件在部分耗尽状态下运行时，靠近界面的氧前体密度的增加导致 NBTI 效应的饱和度降低。这种效应可能与平带电压变为更负值以及阈值电压随前体密度增加有关。在工作序列中，表明随着工作温度的升高，NBTI 引起的阈值电压劣化增加，这对于较大的栅极电压更为明显。