In this paper, a Z-shaped gate dielectric modulated (DM) tunnel field-effect transistor-(TFET) based biosensor with extended horizontal n+ pocket in the source region is proposed and different performances were investigated. Effective structural modification has been done by considering the filed induced quantum confinements effects to enhance the various performances of the device in terms of ON current (I_on) and threshold voltage. The horizontal pocket beneath the source region of the ZHP-DM-TFET biosensor enables the vertical tunneling besides the lateral tunneling which leads to enhancement of device performance in terms of short channel effects, low OFF the current. A comparative study is also carried with existing biosensors and it is observed that the ZHP-DM-TFET biosensor shows superiority over the other biosensors due to its irregular arrangement of the gate and the horizontal n+ pocket provides. The sensitivity analysis of the device was further investigated by varying the dielectric constant of the biomolecules inside the nanocavity for the value from K = 1 to K = 10. The ZHP-DM-TFET biosensor shows a significant improvement in threshold voltage sensitivity 20% (k = 2), 35%(K = 4) and a 10² improvement in I_on/I_off ratio. The impact of the thickness of the n+ pocket (pocket) over the sensitivity of the biosensor is also investigated.

中文翻译：

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基于 Z 形栅极介电调制 (DM) 隧道场效应晶体管 (TFET) 的具有扩展水平 N+ 袋的生物传感器的性能分析

在本文中，提出了一种基于 Z 形栅极介电调制 (DM) 隧道场效应晶体管 (TFET) 的生物传感器，该传感器在源极区具有扩展的水平 n+ 口袋，并研究了不同的性能。通过考虑场诱导量子限制效应进行了有效的结构修改，以提高器件在导通电流（I _on) 和阈值电压。ZHP-DM-TFET 生物传感器源区下方的水平袋除了横向隧穿外，还能实现垂直隧穿，从而在短沟道效应、低截止电流方面提高器件性能。还对现有的生物传感器进行了比较研究，观察到 ZHP-DM-TFET 生物传感器由于其栅极的不规则排列和水平 n+ 袋提供而显示出优于其他生物传感器的优势。通过将纳米腔内生物分子的介电常数从K  = 1 改变到K  = 10，进一步研究了器件的灵敏度分析。ZHP-DM-TFET 生物传感器显示阈值电压灵敏度显着提高了 20%（克 = 2)、35%( K  = 4) 和 10 ²改善I _on / I _off比率。还研究了 n+ 袋（袋）的厚度对生物传感器灵敏度的影响。