The knowledge of the consequences of charged particles interaction with semiconductor materials is of paramount interest to study the performance of devices for space applications. Particularly, GaAs is one of the most used for device development. Here, we present a novel method to measure the projected range of energetic protons impinging crystalline GaAs based on µRaman spectroscopy. To validate the method, different proton energies were obtained using appropriate Al foils, an approach which has been properly justified. Finally, the spatial variation of different parameters obtained from Raman spectra is compared with SRIM (Stopping and Range of Ions in Matter) simulations, showing a remarkable agreement of the theoretical and experimental ranges.

了解带电粒子与半导体材料相互作用的后果对于研究空间应用设备的性能至关重要。特别是 GaAs 是最常用于器件开发的一种。在这里，我们提出了一种新的方法来测量基于 µRaman 光谱的高能质子撞击晶体 GaAs 的投影范围。为了验证该方法，使用适当的铝箔获得了不同的质子能量，这种方法已得到适当证明。最后，将从拉曼光谱获得的不同参数的空间变化与 SRIM（物质中离子的停止和范围）模拟进行比较，显示理论和实验范围的显着一致性。