We report the site-selective remote epitaxial growth of mechanically transferable ZnO microrod (MR) and microdisk (MD) arrays via hydrothermal growth. To designate the growth sites, a hole-patterned poly(methyl methacrylate) mask layer is formed on the graphene-coated GaN substrate. ZnO microarrays are exclusively grown to be either MR or MD on graphene-exposed patterned areas via the remote epitaxy. The remote heteroepitaxial relation between ZnO and GaN across graphene is observed by atomic resolution scanning transmission electron microscopy. The non-covalent remote epitaxial interface allows the mechanical lift-off of the ZnO microarrays and mass-transfer onto a surface of interest using a sticky tape as those arrays are well maintained. The donor substrate is refurbished for repetitive position-controlled remote epitaxy. This study provides a simple method of fabricating mass-transferable microarrays of semiconductors that can maintain the addressable spatial arrays of semiconductors to an arbitrary receiver substrate for ease of heterogeneous integration without an additional assembly process for position control.

中文翻译：

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位置控制的 ZnO 远程外延用于已部署的半导体微阵列的传质

我们报告了机械可转移 ZnO 微棒 (MR) 和微盘 (MD) 阵列通过水热生长的站点选择性远程外延生长。为了指定生长位置，在石墨烯涂覆的 GaN 衬底上形成孔图案聚（甲基丙烯酸甲酯）掩模层。ZnO 微阵列通过远程外延在石墨烯暴露的图案区域上专门生长为 MR 或 MD。通过原子分辨率扫描透射电子显微镜观察到整个石墨烯之间ZnO和GaN之间的异质外延关系。非共价远程外延界面允许将ZnO微阵列机械剥离，并使用胶带将其质量转移到目标表面上，因为这些阵列得到了很好的维护。对供体衬底进行翻新以进行重复的位置控制远程外延。