We report the strong ferromagnetic order in van der Waals (vdW) layered SnS₂ induced by cobalt substitution. The single-crystal Co-doped SnS₂ grown by a self-flux method reveals a relatively high Curie temperature (T_C) of ∼131 K with an in-plane magnetic easy axis and a large saturation magnetization of ∼0.65 emu g⁻¹ for the 2 at. % Co concentration, which is two orders of magnitude larger than the previously reported value for transition-metal-doped SnS₂. The average magnetic moment per Co atom, as high as 1.08 µ_B, is consistent with the calculated value based on density functional theory, i.e., 1 µ_B, indicating a negligible antiferromagnetic coupling between Co atoms. Magnetoresistance shows a change in sign from positive to negative, which further confirms the ferromagnetic order in Co-doped SnS₂. Our s-p hybridized vdW layered SnS₂ serves as a host semiconductor material to search for a suitable magnetic dopant with a high magnetic moment and room temperature T_C for next-generation spintronics.

中文翻译：

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在 SnS2 半导体中使用钴掺杂剂增强磁矩

我们报告了由钴取代引起的范德华 (vdW) 层状 SnS _{2 中}的强铁磁有序。通过自通量法生长的单晶Co掺杂SnS _2表现出居里温度（T _C）较高，约为131 K，且具有易磁化面，且饱和磁化强度较大，约为0.65 emu g ^-1对于 2 在。% Co 浓度，比之前报道的掺杂过渡金属的 SnS ₂值大两个数量级。每个Co原子的平均磁矩高达1.08 µ _B，与基于密度泛函理论的计算值一致，即1 µ _B，表明 Co 原子之间的反铁磁耦合可以忽略不计。磁阻显示从正到负的符号变化，这进一步证实了Co掺杂的SnS _{2 中}的铁磁有序。我们的sp杂化 vdW 层状 SnS ₂作为主体半导体材料，为下一代自旋电子学寻找合适的具有高磁矩和室温T _{C 的}磁性掺杂剂。