Influence of Plasma-Enhanced Chemical Vapor Deposition Poly-Si Layer Thickness on the Wrap-Around and the Quantum Efficiency of Bifacial n-TOPCon (Tunnel Oxide Passivated Contact) Solar Cells,Physica Status Solidi (A) - Applications and Materials Science

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Influence of Plasma-Enhanced Chemical Vapor Deposition Poly-Si Layer Thickness on the Wrap-Around and the Quantum Efficiency of Bifacial n-TOPCon (Tunnel Oxide Passivated Contact) Solar Cells
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-05-29 , DOI: 10.1002/pssa.202100156
Benjamin Grübel ₁ , Henning Nagel ₁ , Bernd Steinhauser ₁ , Frank Feldmann ₂ , Sven Kluska ₁ , Martin Hermle ₁

Affiliation

In typical industrial processing of tunnel oxide passivated contact (TOPCon) solar cells, poly-Si is deposited on the entire back of the cells. During the deposition process, a wrap-around of poly-Si onto the edges and the front side of the cells is virtually unavoidable if chemical vapor deposition processes are used. Plasma-enhanced chemical vapor deposition (PECVD) is used to investigate very thin poly-Si films and their effect on wrap-around on bifacial TOPCon solar cells fabricated without wrap-around etching. As a result, reduction of the poly-Si thickness down to 30 nm significantly increases the shunt resistance, reduces the reverse bias current, and thus reduces the risk of hot spots as measured by IR imaging and microcharacterization by secondary electron microscopy. Electroplated metallization proves to be a suitable candidate for contacting such thin TOPCon layers, being less sensitive than screen-printed metallization.

中文翻译：

等离子体增强化学气相沉积多晶硅层厚度对双面 n-TOPCon（隧道氧化物钝化接触）太阳能电池的环绕和量子效率的影响

在隧道氧化物钝化接触 (TOPCon) 太阳能电池的典型工业加工中，多晶硅沉积在电池的整个背面。在沉积过程中，如果使用化学气相沉积工艺，多晶硅环绕在电池的边缘和正面几乎是不可避免的。等离子体增强化学气相沉积 (PECVD) 用于研究非常薄的多晶硅薄膜及其对无需环绕蚀刻制造的双面 TOPCon 太阳能电池的环绕影响。因此，将多晶硅厚度降低至 30 nm 会显着增加分流电阻，降低反向偏置电流，从而降低通过 IR 成像和二次电子显微镜微观表征测量的热点风险。

更新日期：2021-05-29

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