The damage-induced voltage alteration (DIVA) contrast mechanism in scanning electron microscope (SEM) has been studied in broad range of the primary electron beam energies, with a special emphasis on the ultra-low energy range. The SEM imaging contrast related to resistivity changes in the In_(0.55)Al_(0.45)P irradiated with He²⁺ ions of 600 keV was subjected to an analysis in a range of 10 keV down to 10 eV of primary electron energies. The problem of specimen charging in ultra-low energy range and its effect on the contrast in SEM images has been tackled for the first time. Contrary to expectations based on the classical total emission yield approach, the potentials formed at the highly resistive part of irradiated area led to dramatic increase in the intensity of registered signal for primary electron energies below E₁, which can be explained as signal saturation due to potential on the specimen surface acting as repeller for primary electrons. Nevertheless, the experimental data presenting the influence of the beam energy on the potential formation on the surface of an insulating material under electron irradiation have been presented for the first time in ultra-low energy regime.

扫描电子显微镜 (SEM) 中的损伤诱导电压改变 (DIVA) 对比机制已在广泛的初级电子束能量范围内进行了研究，特别强调了超低能量范围。与 He ²⁺辐照的 In _(0.55) Al _(0.45 )P电阻率变化相关的 SEM 成像对比度600 keV 的离子在 10 keV 到 10 eV 的初级电子能量范围内进行分析。首次解决了超低能量范围内的样品充电问题及其对 SEM 图像对比度的影响。与基于经典总发射产额方法的预期相反，在照射区域的高电阻部分形成的电位导致初级电子能量低于 E ₁的记录信号强度急剧增加，这可以解释为信号饱和，因为样品表面上的电位充当初级电子的排斥极。尽管如此，首次在超低能量状态下展示了电子束能量对绝缘材料表面电势形成影响的实验数据。