The analytical theory of acoustic phonons arising in the layers of a nitride-based nanostructure, taking into account the presence of the piezoelectric effect, was developed. Proposed theory is based on the first obtained exact solutions of the system consisting of equation of motion for a semiconductor medium and Maxwell equation. The theory of the electronic spectrum renormalized by their interaction with acoustic phonons via deformation and piezoelectric potentials was developed using the method of the temperature Green's function and the Dyson equation. Direct calculations of the electron level shifts and their decay rates are performed for geometric and physical parameters of the new experimentally created nanostructure for various temperature values.

考虑到压电效应的存在，开发了在氮化物基纳米结构层中产生的声学声子的分析理论。提出的理论基于首次获得的系统精确解，该系统由半导体介质的运动方程和麦克斯韦方程组组成。使用温度格林函数和戴森方程的方法开发了通过变形和压电势与声学声子相互作用而重新归一化的电子谱理论。对于不同温度值的新实验创建的纳米结构的几何和物理参数，对电子能级位移及其衰减率进行了直接计算。