In this work, the DC behavior of AlGaN/GaN Metal-Insulator-Semiconductor high electron mobility transistors (MO(I)SHEMTs) with two different gate dielectrics (Al₂O₃ and Si₃N₄) is analyzed through the experimental comparison of their basic and analog parameters. The transistors with Si₃N₄ insulator are more closely related to the normally-off devices (less negative threshold voltage) and less affected by the short channel effects (better DIBL behavior). Although the devices with Si₃N₄ layer presented a double conduction, that results in anomalous transconductance behavior, it is more suitable for analog applications since the Al₂O₃ devices suffer large self-heating. The very high gate leakage of Si₃N₄ MISHEMT degrades the subthreshold regime, which decreases the transistor efficiency at weak inversion. On the other hand, the devices with Si₃N₄ insulator present relatively large Early voltage and consequently high intrinsic voltage gain in strong inversion, reaching 84 V/V (38.5 dB). Even at high temperatures the intrinsic voltage gain is practically the same, degrading only 1.5 dB from 25 °C to 150 °C for a long channel device.

在这项工作中，通过实验比较，分析了具有两种不同栅极电介质（Al ₂ O ₃和 Si ₃ N ₄）的 AlGaN/GaN 金属-绝缘体-半导体高电子迁移率晶体管（MO（I）SHEMT）的直流行为它们的基本和模拟参数。具有 Si ₃ N ₄绝缘体的晶体管与常关器件的关系更密切（负阈值电压更小）并且受短沟道效应的影响更小（更好的 DIBL 行为）。尽管具有 Si ₃ N ₄层的器件呈现双传导，导致反常的跨导行为，但它更适合模拟应用，因为 Al₂ O ₃器件承受较大的自热。Si ₃ N ₄ MISHEMT非常高的栅极泄漏会降低亚阈值机制，从而降低弱反转时的晶体管效率。另一方面，具有 Si ₃ N ₄绝缘体的器件在强反转中呈现相对较大的早期电压，因此具有较高的固有电压增益，达到 84 V/V (38.5 dB)。即使在高温下，固有电压增益实际上是相同的，对于长通道器件，从 25 °C 到 150 °C 仅降低 1.5 dB。