In recent years, laminates consisting of alternating layers of two binary oxides with layer thicknesses below 1 nm have attracted attention for their high dielectric constant values, reaching values of about 1000 in the case of Al₂O₃/TiO₂ sub-nanometric laminates. This excellent dielectric performance of the sub-nanometric laminates relies on the Maxwell Wagner (MW) relaxation, exploiting the blocking of the mobile charge carriers of the semiconducting TiO₂ at the interface with Al₂O₃. In this work, we explore the possibilities of enhancing the dielectric constant by MW relaxation in amorphous sub-nanometric laminates of Al₂O₃/ZnO. We demonstrate that the sublayer thickness and the interface of individual layers define the apparent dielectric constant of the laminates. In addition or further understanding, simulations and equivalent circuit analysis of the sub-nanometric laminates were conducted.

近年来，由层厚低于 1 nm 的两种二元氧化物交替层组成的层压板因其高介电常数值而受到关注，在 Al ₂ O ₃ /TiO ₂亚纳米层压板的情况下达到约 1000 的值。亚纳米层压板的这种优异介电性能依赖于麦克斯韦瓦格纳 (MW) 弛豫，利用半导体 TiO ₂的移动电荷载流子在与 Al ₂ O ₃的界面处的阻挡。在这项工作中，我们探索了在 Al ₂ O ₃非晶亚纳米层压板中通过 MW 弛豫提高介电常数的可能性/氧化锌。我们证明了子层厚度和各个层的界面定义了层压板的表观介电常数。此外或进一步理解，还进行了亚纳米层压板的模拟和等效电路分析。