Two-dimensional (2D) materials represent an emerging technology for transistor electronics in view of their attractive electrical and mechanical properties. This work investigates molybdenum disulfide (MoS₂) based field-effect transistors (FETs) fabricated on paper substrate for designing both digital and analog circuits, such as inverter, current mirror, and Physical Unclonable Function (PUF) bitcell. Electrical measurements of fabricated devices are exploited to setup a look-up-table (LUT)-based Verilog-A model to be integrated in a commercial circuit simulator. Obtained results prove the potential of paper-based MoS₂ FETs as building blocks of next-generation integrated circuits for a wide range of practical applications.

鉴于其具有吸引力的电气和机械性能，二维 (2D) 材料代表了晶体管电子学的新兴技术。这项工作研究了在纸基板上制造的基于二硫化钼 (MoS ₂ ) 的场效应晶体管 (FET)，用于设计数字和模拟电路，例如逆变器、电流镜和物理不可克隆功能 (PUF) 位单元。利用制造设备的电气测量来设置基于查找表 (LUT) 的 Verilog-A 模型，以集成到商业电路模拟器中。获得的结果证明了基于纸的 MoS ₂ FET 作为下一代集成电路构建块的潜力，用于广泛的实际应用。