Despite the breathtaking progress already achieved for electronic devices built from 2D materials, they are still far from exploiting their full theoretical performance potential. Many of these problems are due to the lack of suitable insulators which would go along with 2D materials as nicely as SiO₂ goes with Si. For instance, amorphous oxides known from Si technologies contain numerous defects which degrade the device performance and stability, and hBN is not suitable for nanoscale devices due to limited dielectric properties. Thus, we suggest that an intensive search of beyond-hBN layered 2D insulators and other crystalline insulators such as CaF₂, other fluorides and native oxides is required for the further development of next-generation 2D nanoelectronics.

尽管由 2D 材料制成的电子设备已经取得了惊人的进步，但它们仍远未发挥其全部理论性能潜力。许多这些问题是由于缺乏合适的绝缘体，这些绝缘体与 2D 材料相得益彰，就像 SiO ₂与 Si 相得益彰。例如，Si 技术中已知的非晶氧化物包含许多降低器件性能和稳定性的缺陷，并且 hBN 由于有限的介电特性而不适合纳米级器件。因此，我们建议深入研究超越 hBN 的层状二维绝缘体和其他晶体绝缘体，如 CaF ₂、其他氟化物和天然氧化物，以进一步开发下一代二维纳米电子学。