Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm²/Vs, an on/off current ratio of 1 × 10⁴, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

低温处理的半导体是下一代可扩展电子产品的新兴需求，这些半导体需要具有大面积制造、溶液可加工性、高电气性能和宽光谱光吸收特性。尽管已经实现了低温处理n型半导体的各种策略，但在低温下开发高性能p型半导体仍然受到限制。在这里，我们报告了一种独特的低温处理方法，用于在可扩展区域上合成碲纳米线网络（Te-nanonets），用于制造具有均匀和稳定的高性能大面积 p 型场效应晶体管（FET）。电学和光学特性。最大迁移率为 4.7 cm ² /Vs，开/关电流比为 1 × 10^{如图 4 所示}，实现了 2.18 µS 的最大跨导。为了进一步证明所提出的半导体的适用性，还测量了基于 Te 纳米网的 42 个器件的晶体管阵列的电气性能，显示出稳定和一致的结果。最后，为了拓宽基于 p 型 Te 纳米网的 FET 的适用性，在很宽的光谱范围内进行了光学测量，揭示了异常均匀的光学性能。