In this work, the effect of atomic defects created by gallium ion irradiation on the optical properties of single-layer molybdenum disulfide is studied by means of micro-photoluminescence measurements. The induced defects give rise to an additional emission band located at about 170 meV below the free exciton. The micro-photoluminescence intensity of this defect-related emission band is found to be proportional to the defect density. The large spectral width suggests the presence of binding sites with different binding energies available for excitons that remain optically active up to 230 K.

中文翻译：

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二维 (2D) MoS2 中束缚于缺陷态的激子


在这项工作中，通过微光致发光测量研究了镓离子辐照产生的原子缺陷对单层二硫化钼光学性能的影响。诱导缺陷产生位于自由激子​​下方约 170 meV 的额外发射带。发现该与缺陷相关的发射带的微光致发光强度与缺陷密度成正比。大光谱宽度表明存在具有不同结合能的结合位点，可用于在高达 230 K 的温度下保持光学活性的激子。