Silicon-based millimeter-wave (mm-Wave) power amplifiers (PAs) with high power and high peak/back-off efficiency are highly desired to efficiently amplify multi-Gb/s 5G NR signals. This article presents a fully integrated high-power broadband linear Doherty PA with multi-primary distributed-active-transformer (DAT) power combining. We introduce a transformer-based impedance inverter for active load modulation and a multi-primary DAT structure for hybrid series and parallel power combining. Based on this, we propose a transformer-based Doherty combiner with more design freedom and a multi-primary DAT-based Doherty PA for simultaneous active load modulation and low-loss power combining. The EM simulation results demonstrate that the proposed DAT-based Doherty output network achieves very symmetric and balanced load impedances among all the main and auxiliary PA ports. As a proof of concept, a 24-30-GHz prototype PA is implemented in a 0.13- μm SiGe BiCMOS process. The PA achieves 30.4% PAEmax, 28.3-dBm Psat, 30.2% PAE at 26.8-dBm P1 dB, and 21.2% PAE at 6-dB back-off from Psat at 28 GHz. Modulation measurement with single-carrier 64-QAM signals and 5G NR FR2 orthogonal frequency-division multiplexing (OFDM) signals has been demonstrated. For a 200-MHz 1-CC 5G NR FR2 64-QAM signal, the PA achieves 18.1-dBm Pavg and 13.8% PAEavg with -25.1-dB rms EVM at 28 GHz.

中文翻译：

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适用于毫米波 5G 应用的基于 DAT 的高功率宽带多基频 Doherty 功率放大器


非常需要具有高功率和高峰值/回退效率的硅基毫米波 (mm-Wave) 功率放大器 (PA)，以有效放大多 Gb/s 5G NR 信号。本文介绍了一种具有多初级分布式有源变压器 (DAT) 功率组合的完全集成高功率宽带线性 Doherty PA。我们引入了用于有源负载调制的基于变压器的阻抗逆变器和用于混合串联和并联功率组合的多初级 DAT 结构。基于此，我们提出了一种具有更多设计自由度的基于变压器的Doherty组合器和一种基于多基DAT的Doherty PA，用于同时有源负载调制和低损耗功率组合。 EM 仿真结果表明，所提出的基于 DAT 的 Doherty 输出网络在所有主和辅助 PA 端口之间实现了非常对称和平衡的负载阻抗。作为概念验证，24-30GHz 原型 PA 采用 0.13μm SiGe BiCMOS 工艺实现。该 PA 在 28 GHz 频率下可实现 30.4% PAEmax、28.3 dBm Psat、26.8 dBm P1 dB 时 30.2% PAE，以及 21.2% PAE（从 Psat 回退 6 dB）。已经演示了使用单载波 64-QAM 信号和 5G NR FR2 正交频分复用 (OFDM) 信号进行的调制测量。对于 200 MHz 1-CC 5G NR FR2 64-QAM 信号，PA 在 28 GHz 下实现了 18.1 dBm Pavg 和 13.8% PAEavg，以及 -25.1 dB rms EVM。