This study presents the impact of heavy ions on the SEU features and predicts the on-orbit SEU rate for the space application of high-performance 28 nm bulk SRAM-based FPGAs. The measured SEU cross sections are employed to characterize the radiation sensitivities. The results show a significant difference among the SEU cross sections of CRAMs, BRAMs, and DFFs. The employed test methods have an influence on SEU cross section results, which is verified in our application-oriented BRAM test. In addition, the radiation-sensitive resource such as the clock buffers is essential to further improve the radiation tolerance of FPGA. These results indicate that the reasonable hardening strategies are still useful for the 28 nm bulk CMOS high-performance FPGAs, which significantly promote the space application of the 28 nm high-performance FPGAs.

本研究展示了重离子对 SEU 特征的影响，并预测了基于 28 nm 大容量 SRAM 的高性能 FPGA 空间应用的在轨 SEU 率。测量的 SEU 横截面用于表征辐射敏感性。结果显示 CRAM、BRAM 和 DFF 的 SEU 横截面之间存在显着差异。所采用的测试方法对 SEU 横截面结果有影响，这在我们面向应用的 BRAM 测试中得到了验证。此外，时钟缓冲器等辐射敏感资源对于进一步提高FPGA的辐射耐受性至关重要。这些结果表明，合理的硬化策略对28 nm体CMOS高性能FPGA仍然有用，这显着促进了28 nm高性能FPGA的空间应用。