Molybdenum trioxide thin films were grown onto well cleaned Indium Tin Oxide coated glass substrate by Pulsed Laser Deposition technique in presence of oxygen partial pressure about 100 mTorr and at several substrate temperature (T_s) ranging from 100 °C to 400 °C. Systematic characterisation of grown films is employed in order to study the growth of films, structure, optical and electrochromic properties. Presence of only Mo and O elements in Energy Dispersive Spectra of grown films stated that the films were pure without any contaminants. The films were showing mixed α and β phase at T_s = 100 °C and slowly turns to α-phase with rise of substrate temperature to 400 °C. The grain size was observed to be increased in the films deposited up to 300 °C which is supported by Scanning Electron Microscopic and Atomic Force Microscopic images. The variation in the optical transmittance, bandgap and electrochromic efficiency with respect to substrate temperature are clearly discussed in this research paper.

通过脉冲激光沉积技术在约 100 mTorr 的氧分压和范围从 100 °C 到 400 °C 的几个基板温度 (T _s )下，将三氧化钼薄膜生长到良好清洁的氧化铟锡涂层玻璃基板上。采用生长膜的系统表征来研究膜的生长、结构、光学和电致变色特性。生长薄膜的能量色散谱中仅存在 Mo 和 O 元素表明薄膜是纯净的，没有任何污染物。薄膜在 T _s显示出混合的 α 和 β 相 = 100 °C 并随着衬底温度升高到 400 °C 缓慢转变为 α 相。在高达 300 °C 的沉积膜中观察到晶粒尺寸增加，这得到了扫描电子显微镜和原子力显微镜图像的支持。本研究论文清楚地讨论了光透射率、带隙和电致变色效率随基板温度的变化。