In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (V_D = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).

在本文中，AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的噪声功率谱密度 (PSD) 在线性操作 (V _D  = 50 mV) 下进行了实验研究，适用于不同的沟道长度 (L) 和宽度 (W ) 在不同温度下（5.32 °C 至 100 °C）。将分析噪声的来源以了解所涉及的物理机制。结果表明，低频 (LF) 噪声以 1/f 噪声为主，源自数量波动。此外，在较短的器件中，发现了较高的 1/f 噪声 PSD。LF 噪声特性表明，硅衬底上的 AlGaN/GaN HEMT 可以成为模拟和射频应用 (RF) 的有希望的候选者。