当前位置: X-MOL 学术Solid State Electron. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
Solid-State Electronics ( IF 1.4 ) Pub Date : 2021-05-28 , DOI: 10.1016/j.sse.2021.108050
Maria Glória Caño de Andrade , Luis Felipe de Oliveira Bergamim , Braz Baptista Júnior , Carlos Roberto Nogueira , Fábio Alex da Silva , Kenichiro Takakura , Bertrand Parvais , Eddy Simoen

In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 °C till 100 °C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).



中文翻译:

AlGaN/GaN 高电子迁移率晶体管的低频噪声研究

在本文中,AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的噪声功率谱密度 (PSD) 在线性操作 (V D  = 50 mV) 下进行了实验研究,适用于不同的沟道长度 (L) 和宽度 (W ) 在不同温度下(5.32 °C 至 100 °C)。将分析噪声的来源以了解所涉及的物理机制。结果表明,低频 (LF) 噪声以 1/f 噪声为主,源自数量波动。此外,在较短的器件中,发现了较高的 1/f 噪声 PSD。LF 噪声特性表明,硅衬底上的 AlGaN/GaN HEMT 可以成为模拟和射频应用 (RF) 的有希望的候选者。

更新日期:2021-06-02
down
wechat
bug