In this paper, the analog properties of advanced GaN/AlGaN High-Electron-Mobility Transistors (HEMTs) are studied as a function of temperature (T). The drain current, the threshold voltage, the transconductance and the output conductance are experimentally investigated under saturation operation. Moreover, important figures of merit for the analog performance, such as transconductance-over-drain current, Early voltage and intrinsic voltage gain are analyzed for different channel lengths in the temperature range of 25 °C till 200 °C. The results indicate that due to change in the Fermi potential, the analog parameters reduce with increasing T. Furthermore, the performance increase for longer channel devices is correlated directly with the lower drain electric field penetration.

在本文中，高级 GaN/AlGaN 高电子迁移率晶体管 (HEMT) 的模拟特性作为温度 (T) 的函数进行了研究。在饱和操作下对漏极电流、阈值电压、跨导和输出电导进行了实验研究。此外，针对不同通道长度在 25 °C 至 200 °C 的温度范围内分析了模拟性能的重要品质因数，例如跨导过漏电流、早期电压和固有电压增益。结果表明，由于费米电位的变化，模拟参数随着 T 的增加而降低。此外，更长沟道器件的性能提高与较低的漏极电场穿透直接相关。