Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier (CHC) degradation has been induced to provoke some damage in the studied devices. The results show that the use of the two KPFM configurations, together with their nanoscale resolution, provides additional information about the damage in the different regions/materials of the devices, allowing to correlate device level characteristics with the nanoscale material properties.

中文翻译：

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利用 KPFM 功能在纳米级分析电应力对 OTFT 特性的影响

结合了两种不同的开尔文探针力显微镜 (KPFM) 测量配置，以在纳米尺度上评估电应力对有机薄膜晶体管 (OTFT) 特性的影响。例如，已引起通道热载流子 (CHC) 退化，从而在所研究的器件中引起一些损坏。结果表明，使用两种 KPFM 配置及其纳米级分辨率，提供了有关器件不同区域/材料中损坏的额外信息，允许将器件级特性与纳米级材料特性相关联。