In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.

中文翻译：

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Ti/4H-SiC 肖特基二极管的势垒高度调谐

在这项工作中，我们研究了退火温度和金属厚度对最先进的 Ti/4H-SiC 整流器中肖特基势垒高度的影响。通过改变这两个参数，获得了肖特基势垒高度的受控降低，从而提供了在功耗方面提高器件效率的可能性。