We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes (LEDs) emitting at 232 nm entirely grown by metalorganic vapor phase epitaxy (MOVPE). A GaN:Si interlayer was embedded into a highly Mg- and Si-doped ${\mathrm{Al}}_{0.87}{\mathrm{Ga}}_{0.13}\mathrm{N}$ tunnel junction to enable polarization field enhanced tunneling. The LEDs exhibit an on-wafer integrated emission power of 77 μW at 5 mA, which correlates to an external quantum efficiency (EQE) of 0.29% with 45 μW emitted through the bottom sapphire substrate and 32 μW emitted through the transparent top surface. After depositing a highly reflective aluminum reflector, a maximum emission power of 1.73 mW was achieved at 100 mA under pulsed mode operation with a maximum EQE of 0.35% as collected through the bottom substrate.

中文翻译：

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高透明 MOVPE 生长的基于 AlGaN 的隧道异质结 LED 的电学和光学特性，发射波长为 232 nm

我们展示了完全通过金属有机气相外延 (MOVPE) 生长的 232 nm 发射高度透明的基于 AlGaN 的隧道异质结发光二极管 (LED) 的生长和电光特性。GaN:Si 中间层被嵌入到高度 Mg 和 Si 掺杂中${铝}_{0.87}{嘎}_{0.13}\mathrm{N}$隧道结以实现极化场增强隧道。LED 在 5 mA 时表现出 77 μW 的晶圆上集成发射功率，这与 0.29% 的外部量子效率 (EQE) 相关，其中 45 μW 通过底部蓝宝石衬底发射，32 μW 通过透明顶面发射。沉积高反射铝反射器后，在脉冲模式操作下，在 100 mA 下实现了 1.73 mW 的最大发射功率，通过底部基板收集的最大 EQE 为 0.35%。