In this work, we present the synthesis and characterization of molybdenum oxide (MoO₃) nanoparticles (NPs). The MoO₃ NPs were coated on silicon (Si) wafer to fabricate n-MoO₃/p-Si diode by the spin coating method. X-ray diffraction (XRD) profiles clearly show the crystalline nature of all specimens with an orthorhombic crystal system. Stretching and bending vibrations of molybdenum-oxygen were confirmed by the Fourier transform infrared analysis. The maximum absorbance was observed for MoO₃ NPs prepared from Nitric acid (HNO₃). Nano flakes like morphology were seen by scanning electron microscopy (SEM), and elemental dispersion spectral analysis approved expected Mo and O elements in the final product. Transmission electron microscopy (TEM) analysis of the as-prepared samples indicates a single-phase orthorhombic crystal structure. Electrical conductivity results show that synthesized samples are having semiconducting behavior. It is noted that the p–n junction diode prepared with Hydrochloric acid (HCl) has better rectifying behavior with lower ideal factor (n) values of 2.47 than the other sample.

在这项工作中，我们介绍了氧化钼 (MoO ₃ ) 纳米粒子 (NPs)的合成和表征。通过旋涂法将MoO ₃ NPs涂覆在硅(Si)晶片上以制备n -MoO ₃ / p -Si二极管。X 射线衍射 (XRD) 曲线清楚地显示了所有具有斜方晶系的样品的结晶性质。通过傅里叶变换红外分析证实了钼-氧的拉伸和弯曲振动。观察到的最大吸光度为的MoO _3周的NP从硝酸制备（HNO ₃）。通过扫描电子显微镜 (SEM) 观察到纳米薄片状形态，元素色散光谱分析证实了最终产品中预期的 Mo 和 O 元素。所制备样品的透射电子显微镜 (TEM) 分析表明其为单相正交晶体结构。电导率结果表明合成样品具有半导体行为。值得注意的是，与其他样品相比，用盐酸 (HCl) 制备的p-n结二极管具有更好的整流行为，理想因子 (n) 值较低，为 2.47。